Nambari ya Sehemu :
APTMC120HM17CT3AG
Mzalishaji :
Microsemi Corporation
Maelezo :
POWER MODULE - SIC MOSFET
Aina ya FET :
4 N-Channel
Makala ya FET :
Silicon Carbide (SiC)
Kukata kwa Voltage Voltage (Vdss) :
1200V (1.2kV)
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
147A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
17 mOhm @ 100A, 20V
Vgs (th) (Max) @ Id :
4V @ 30mA
Malango ya Lango (Qg) (Max) @ Vgs :
332nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
5576pF @ 1000V
Joto la Kufanya kazi :
-40°C ~ 175°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
Module
Kifurushi cha Kifaa cha Mtoaji :
SP3