SI4590DY-T1-GE3 Bei (USD) [227995pcs Hisa]
- 1 pcs$0.16223
- 2,500 pcs$0.15266
- Nambari ya Sehemu:
- SI4590DY-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N/P CHAN 100V SO8 DUAL.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF, Thyristors - SCR, Viwango - RF, Viwango - Zener - Moja and Transistors - IGBTs - Moja ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI4590DY-T1-GE3 electronic components. SI4590DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4590DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4590DY-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI4590DY-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N/P CHAN 100V SO8 DUAL
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
N and P-Channel
Makala ya FET :
-
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3.4A, 2.8A
Njia ya Kutumia (Max) @ Id, Vgs :
57 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
11.5nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
360pF @ 50V
Nguvu - Max :
2.4W, 3.4W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SO
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