Infineon Technologies - IPG20N04S412ATMA1

KEY Part #: K6525337

IPG20N04S412ATMA1 Bei (USD) [202548pcs Hisa]

  • 1 pcs$0.18261
  • 5,000 pcs$0.16757

Nambari ya Sehemu:
IPG20N04S412ATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET 2N-CH 8TDSON.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Transistors - IGBTs - Arrays, Thyristors - SCRs - Moduli, Viwango - Rectifiers - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Arrays and Transistors - Kusudi Maalum ...
Faida ya Ushindani:
We specialize in Infineon Technologies IPG20N04S412ATMA1 electronic components. IPG20N04S412ATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N04S412ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPG20N04S412ATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPG20N04S412ATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET 2N-CH 8TDSON
Mfululizo : Automotive, AEC-Q101, OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 20A
Njia ya Kutumia (Max) @ Id, Vgs : 12.2 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id : 4V @ 15µA
Malango ya Lango (Qg) (Max) @ Vgs : 18nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1470pF @ 25V
Nguvu - Max : 41W
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-PowerVDFN
Kifurushi cha Kifaa cha Mtoaji : PG-TDSON-8-4