Vishay Siliconix - SIR800DP-T1-GE3

KEY Part #: K6416194

SIR800DP-T1-GE3 Bei (USD) [119500pcs Hisa]

  • 1 pcs$0.31107
  • 3,000 pcs$0.30952

Nambari ya Sehemu:
SIR800DP-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 20V 50A PPAK SO-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Moja, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Moduli za Dereva za Nguvu and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIR800DP-T1-GE3 electronic components. SIR800DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIR800DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIR800DP-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SIR800DP-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 20V 50A PPAK SO-8
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 50A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2.3 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 133nC @ 10V
Vgs (Max) : ±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 5125pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 5.2W (Ta), 69W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SO-8
Kifurushi / Kesi : PowerPAK® SO-8

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