Nexperia USA Inc. - PHK04P02T,518

KEY Part #: K6405983

PHK04P02T,518 Bei (USD) [1476pcs Hisa]

  • 2,500 pcs$0.10409

Nambari ya Sehemu:
PHK04P02T,518
Mzalishaji:
Nexperia USA Inc.
Maelezo ya kina:
MOSFET P-CH 16V 4.66A 8-SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - RF, Viwango - RF, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PHK04P02T,518 Sifa za Bidhaa

Nambari ya Sehemu : PHK04P02T,518
Mzalishaji : Nexperia USA Inc.
Maelezo : MOSFET P-CH 16V 4.66A 8-SOIC
Mfululizo : -
Hali ya Sehemu : Obsolete
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 16V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4.66A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 120 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id : 600mV @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 7.2nC @ 4.5V
Vgs (Max) : ±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 528pF @ 12.8V
Makala ya FET : -
Kuondoa Nguvu (Max) : 5W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-SO
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)