[2642pcs Hisa]
- Nambari ya Sehemu:
- GP1M008A080H
- Mzalishaji:
- Global Power Technologies Group
- Maelezo ya kina:
- MOSFET N-CH 800V 8A TO220.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Viwango - RF, Viwango - Rectifiers - Arrays, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Global Power Technologies Group GP1M008A080H electronic components. GP1M008A080H can be shipped within 24 hours after order. If you have any demands for GP1M008A080H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M008A080H Sifa za Bidhaa
Nambari ya Sehemu :
GP1M008A080H
Mzalishaji :
Global Power Technologies Group
Maelezo :
MOSFET N-CH 800V 8A TO220
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.4 Ohm @ 4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
46nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1921pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
250W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220
Kifurushi / Kesi :
TO-220-3
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