Microsemi Corporation - APTM100H45FT3G

KEY Part #: K6522575

APTM100H45FT3G Bei (USD) [1046pcs Hisa]

  • 1 pcs$44.64869
  • 100 pcs$44.42656

Nambari ya Sehemu:
APTM100H45FT3G
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
MOSFET 4N-CH 1000V 18A SP3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Transistors - FET, MOSFETs - RF, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Viwango - Zener - Arrays and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM100H45FT3G Sifa za Bidhaa

Nambari ya Sehemu : APTM100H45FT3G
Mzalishaji : Microsemi Corporation
Maelezo : MOSFET 4N-CH 1000V 18A SP3
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 4 N-Channel (H-Bridge)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 1000V (1kV)
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 18A
Njia ya Kutumia (Max) @ Id, Vgs : 540 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Malango ya Lango (Qg) (Max) @ Vgs : 154nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4350pF @ 25V
Nguvu - Max : 357W
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : SP3
Kifurushi cha Kifaa cha Mtoaji : SP3