Texas Instruments - CSD23382F4T

KEY Part #: K6411803

CSD23382F4T Bei (USD) [488617pcs Hisa]

  • 1 pcs$0.08069
  • 250 pcs$0.08029
  • 1,250 pcs$0.03765

Nambari ya Sehemu:
CSD23382F4T
Mzalishaji:
Texas Instruments
Maelezo ya kina:
MOSFET P-CH 12V 3.5A 3PICOSTAR.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - Ushirikiano uliopangwa, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Rectifiers - Arrays and Viwango - Zener - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CSD23382F4T Sifa za Bidhaa

Nambari ya Sehemu : CSD23382F4T
Mzalishaji : Texas Instruments
Maelezo : MOSFET P-CH 12V 3.5A 3PICOSTAR
Mfululizo : FemtoFET™
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 12V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.8V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 76 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id : 1.1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 1.35nC @ 4.5V
Vgs (Max) : ±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 235pF @ 6V
Makala ya FET : -
Kuondoa Nguvu (Max) : 500mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 3-PICOSTAR
Kifurushi / Kesi : 3-XFDFN

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