Diodes Incorporated - DMN3026LVT-7

KEY Part #: K6411855

DMN3026LVT-7 Bei (USD) [757135pcs Hisa]

  • 1 pcs$0.04885
  • 3,000 pcs$0.04400

Nambari ya Sehemu:
DMN3026LVT-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N-CH 30V 6.6A 6-SOT26.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - RF, Thyristors - SCRs - Moduli and Transistors - JFETs ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN3026LVT-7 electronic components. DMN3026LVT-7 can be shipped within 24 hours after order. If you have any demands for DMN3026LVT-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3026LVT-7 Sifa za Bidhaa

Nambari ya Sehemu : DMN3026LVT-7
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N-CH 30V 6.6A 6-SOT26
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6.6A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 23 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 12.5nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 643pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.2W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TSOT-26
Kifurushi / Kesi : SOT-23-6 Thin, TSOT-23-6