IRFR9N20DPBF Bei (USD) [13617pcs Hisa]
- 3,000 pcs$0.19186
- Nambari ya Sehemu:
- IRFR9N20DPBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 200V 9.4A DPAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Thyristors - TRIAC, Transistors - JFETs, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moja, Viwango - RF, Viwango - Bridge Rectifiers and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRFR9N20DPBF electronic components. IRFR9N20DPBF can be shipped within 24 hours after order. If you have any demands for IRFR9N20DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR9N20DPBF Sifa za Bidhaa
Nambari ya Sehemu :
IRFR9N20DPBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 200V 9.4A DPAK
Mfululizo :
HEXFET®
Hali ya Sehemu :
Discontinued at Digi-Key
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
9.4A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
380 mOhm @ 5.6A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
27nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
560pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
86W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D-Pak
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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