[1354pcs Hisa]
- Nambari ya Sehemu:
- IRLHM630TR2PBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 30V 21A PQFN.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - RF, Viwango - Bridge Rectifiers, Thyristors - TRIAC, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moduli and Viwango - Zener - Arrays ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRLHM630TR2PBF electronic components. IRLHM630TR2PBF can be shipped within 24 hours after order. If you have any demands for IRLHM630TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLHM630TR2PBF Sifa za Bidhaa
Nambari ya Sehemu :
IRLHM630TR2PBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 30V 21A PQFN
Mfululizo :
HEXFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
21A (Ta), 40A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
3.5 mOhm @ 20A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 50µA
Malango ya Lango (Qg) (Max) @ Vgs :
62nC @ 4.5V
Vgs (Max) :
±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3170pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.7W (Ta), 37W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PQFN (3x3)
Kifurushi / Kesi :
8-VQFN Exposed Pad
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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