Infineon Technologies - IRFR12N25DPBF

KEY Part #: K6411930

[13620pcs Hisa]


    Nambari ya Sehemu:
    IRFR12N25DPBF
    Mzalishaji:
    Infineon Technologies
    Maelezo ya kina:
    MOSFET N-CH 250V 14A DPAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Viwango - RF, Transistors - Kusudi Maalum, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - RF, Transistors - FET, MOSFETs - Moja, Viwango - Rectifiers - Moja and Transistors - IGBTs - Moduli ...
    Faida ya Ushindani:
    We specialize in Infineon Technologies IRFR12N25DPBF electronic components. IRFR12N25DPBF can be shipped within 24 hours after order. If you have any demands for IRFR12N25DPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFR12N25DPBF Sifa za Bidhaa

    Nambari ya Sehemu : IRFR12N25DPBF
    Mzalishaji : Infineon Technologies
    Maelezo : MOSFET N-CH 250V 14A DPAK
    Mfululizo : HEXFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 250V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 14A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 260 mOhm @ 8.4A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 35nC @ 10V
    Vgs (Max) : ±30V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 810pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 144W (Tc)
    Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : D-Pak
    Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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