SSM6N57NU,LF Bei (USD) [699747pcs Hisa]
- 1 pcs$0.05844
- 3,000 pcs$0.05815
- Nambari ya Sehemu:
- SSM6N57NU,LF
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET 2N-CH 30V 4A UDFN6.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moduli, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - Arrays and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage SSM6N57NU,LF electronic components. SSM6N57NU,LF can be shipped within 24 hours after order. If you have any demands for SSM6N57NU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6N57NU,LF Sifa za Bidhaa
Nambari ya Sehemu :
SSM6N57NU,LF
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET 2N-CH 30V 4A UDFN6
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4A
Njia ya Kutumia (Max) @ Id, Vgs :
46 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
4nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
310pF @ 10V
Nguvu - Max :
1W
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
6-WDFN Exposed Pad
Kifurushi cha Kifaa cha Mtoaji :
6-µDFN(2x2)
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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