ON Semiconductor - FDM3622

KEY Part #: K6416229

FDM3622 Bei (USD) [145281pcs Hisa]

  • 1 pcs$0.25586
  • 3,000 pcs$0.25459

Nambari ya Sehemu:
FDM3622
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 100V 4.4A 8MLP.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - Kusudi Maalum, Transistors - IGBTs - Moduli, Thyristors - SCRs - Moduli, Transistors - FET, MOSFETs - Moja, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF and Thyristors - SCR ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDM3622 electronic components. FDM3622 can be shipped within 24 hours after order. If you have any demands for FDM3622, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDM3622 Sifa za Bidhaa

Nambari ya Sehemu : FDM3622
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 100V 4.4A 8MLP
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4.4A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 60 mOhm @ 4.4A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1090pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.1W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-MLP (3.3x3.3)
Kifurushi / Kesi : 8-PowerWDFN

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