IXFH7N100P Bei (USD) [14573pcs Hisa]
- 1 pcs$2.82783
- Nambari ya Sehemu:
- IXFH7N100P
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Arrays, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in IXYS IXFH7N100P electronic components. IXFH7N100P can be shipped within 24 hours after order. If you have any demands for IXFH7N100P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH7N100P Sifa za Bidhaa
Nambari ya Sehemu :
IXFH7N100P
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH
Mfululizo :
HiPerFET™, Polar™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
7A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.9 Ohm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
6V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
47nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2590pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
300W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-247
Kifurushi / Kesi :
TO-247-3
Habari mpya kabisa
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