ON Semiconductor - FQD18N20V2TM

KEY Part #: K6403450

FQD18N20V2TM Bei (USD) [151384pcs Hisa]

  • 1 pcs$0.24433
  • 2,500 pcs$0.22414

Nambari ya Sehemu:
FQD18N20V2TM
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 200V 15A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - Kusudi Maalum, Thyristors - TRIAC, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Moja, Viwango - RF, Transistors - FET, MOSFETs - RF and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQD18N20V2TM Sifa za Bidhaa

Nambari ya Sehemu : FQD18N20V2TM
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 200V 15A DPAK
Mfululizo : QFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 15A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 140 mOhm @ 7.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1080pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.5W (Ta), 83W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D-Pak
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63