STMicroelectronics - STB20NM60-1

KEY Part #: K6415796

[12287pcs Hisa]


    Nambari ya Sehemu:
    STB20NM60-1
    Mzalishaji:
    STMicroelectronics
    Maelezo ya kina:
    MOSFET N-CH 600V 20A I2PAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - RF, Viwango - RF, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moja and Thyristors - DIAC, SIDAC ...
    Faida ya Ushindani:
    We specialize in STMicroelectronics STB20NM60-1 electronic components. STB20NM60-1 can be shipped within 24 hours after order. If you have any demands for STB20NM60-1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STB20NM60-1 Sifa za Bidhaa

    Nambari ya Sehemu : STB20NM60-1
    Mzalishaji : STMicroelectronics
    Maelezo : MOSFET N-CH 600V 20A I2PAK
    Mfululizo : MDmesh™
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 600V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 20A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 290 mOhm @ 10A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 54nC @ 10V
    Vgs (Max) : ±30V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 1500pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 192W (Tc)
    Joto la Kufanya kazi : 150°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : I2PAK
    Kifurushi / Kesi : TO-262-3 Long Leads, I²Pak, TO-262AA