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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - FET, MOSFETs - Arrays
  5. FDME1034CZT

ON Semiconductor - FDME1034CZT

KEY Part #: K6524894

FDME1034CZT Bei (USD) [370455pcs Hisa]

  • 1 pcs$0.10034
  • 5,000 pcs$0.09984
Nambari ya Sehemu:
FDME1034CZT
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N/P-CH 20V 6-MICROFET.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - Moja, Moduli za Dereva za Nguvu, Thyristors - SCR, Transistors - Ushirikiano uliopangwa and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDME1034CZT electronic components. FDME1034CZT can be shipped within 24 hours after order. If you have any demands for FDME1034CZT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDME1034CZT Sifa za Bidhaa

Nambari ya Sehemu : FDME1034CZT
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N/P-CH 20V 6-MICROFET
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N and P-Channel
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.8A, 2.6A
Njia ya Kutumia (Max) @ Id, Vgs : 66 mOhm @ 3.4A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 4.2nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 300pF @ 10V
Nguvu - Max : 600mW
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 6-UFDFN Exposed Pad
Kifurushi cha Kifaa cha Mtoaji : 6-MicroFET (1.6x1.6)

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