[3711pcs Hisa]
- Nambari ya Sehemu:
- PMGD8000LN,115
- Mzalishaji:
- NXP USA Inc.
- Maelezo ya kina:
- MOSFET 2N-CH 30V 0.125A 6TSSOP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - JFETs, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Viwango - Zener - Moja ...
- Faida ya Ushindani:
- We specialize in NXP USA Inc. PMGD8000LN,115 electronic components. PMGD8000LN,115 can be shipped within 24 hours after order. If you have any demands for PMGD8000LN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMGD8000LN,115 Sifa za Bidhaa
Nambari ya Sehemu :
PMGD8000LN,115
Mzalishaji :
NXP USA Inc.
Maelezo :
MOSFET 2N-CH 30V 0.125A 6TSSOP
Mfululizo :
TrenchMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
125mA
Njia ya Kutumia (Max) @ Id, Vgs :
8 Ohm @ 10mA, 4V
Vgs (th) (Max) @ Id :
1.5V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs :
0.35nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
18.5pF @ 5V
Nguvu - Max :
200mW
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji :
6-TSSOP
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