ON Semiconductor - NVMFS6B85NLT3G

KEY Part #: K6401363

NVMFS6B85NLT3G Bei (USD) [3077pcs Hisa]

  • 5,000 pcs$0.15623

Nambari ya Sehemu:
NVMFS6B85NLT3G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 100V 5.6A 19A 5DFN.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - RF, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - Arrays and Viwango - Zener - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFS6B85NLT3G Sifa za Bidhaa

Nambari ya Sehemu : NVMFS6B85NLT3G
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 100V 5.6A 19A 5DFN
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 5.6A (Ta), 19A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 46 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 7.9nC @ 10V
Vgs (Max) : ±16V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 480pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.5W (Ta), 42W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 5-DFN (5x6) (8-SOFL)
Kifurushi / Kesi : 8-PowerTDFN, 5 Leads

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