Vishay Siliconix - SI5432DC-T1-GE3

KEY Part #: K6401427

SI5432DC-T1-GE3 Bei (USD) [3054pcs Hisa]

  • 3,000 pcs$0.29844

Nambari ya Sehemu:
SI5432DC-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 20V 6A 1206-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Moja, Viwango - Rectifiers - Moja, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Transistors - Kusudi Maalum, Transistors - IGBTs - Arrays and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI5432DC-T1-GE3 electronic components. SI5432DC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5432DC-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI5432DC-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SI5432DC-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 20V 6A 1206-8
Mfululizo : TrenchFET®
Hali ya Sehemu : Obsolete
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 20 mOhm @ 8.3A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 33nC @ 10V
Vgs (Max) : ±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1200pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.5W (Ta), 6.3W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 1206-8 ChipFET™
Kifurushi / Kesi : 8-SMD, Flat Lead