DMN2022UNS-7 Bei (USD) [347340pcs Hisa]
- 1 pcs$0.10649
- 2,000 pcs$0.09462
- Nambari ya Sehemu:
- DMN2022UNS-7
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET 2 N-CH 20V POWERDI3333-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Arrays, Transistors - JFETs, Transistors - FET, MOSFETs - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja and Thyristors - SCRs - Moduli ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN2022UNS-7 electronic components. DMN2022UNS-7 can be shipped within 24 hours after order. If you have any demands for DMN2022UNS-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2022UNS-7 Sifa za Bidhaa
Nambari ya Sehemu :
DMN2022UNS-7
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET 2 N-CH 20V POWERDI3333-8
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual) Common Drain
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10.7A (Ta)
Njia ya Kutumia (Max) @ Id, Vgs :
10.8 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
20.3nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1870pF @ 10V
Nguvu - Max :
1.2W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerVDFN
Kifurushi cha Kifaa cha Mtoaji :
PowerDI3333-8
Habari mpya kabisa
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