Nexperia USA Inc. - PSMN6R0-30YL,115

KEY Part #: K6421127

PSMN6R0-30YL,115 Bei (USD) [357223pcs Hisa]

  • 1 pcs$0.10354
  • 1,500 pcs$0.09607

Nambari ya Sehemu:
PSMN6R0-30YL,115
Mzalishaji:
Nexperia USA Inc.
Maelezo ya kina:
MOSFET N-CH 30V 79A LFPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCR, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Arrays and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN6R0-30YL,115 Sifa za Bidhaa

Nambari ya Sehemu : PSMN6R0-30YL,115
Mzalishaji : Nexperia USA Inc.
Maelezo : MOSFET N-CH 30V 79A LFPAK
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 79A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 6 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.15V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 24nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1425pF @ 12V
Makala ya FET : -
Kuondoa Nguvu (Max) : 55W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : LFPAK56, Power-SO8
Kifurushi / Kesi : SC-100, SOT-669