Infineon Technologies - BSZ180P03NS3EGATMA1

KEY Part #: K6421140

BSZ180P03NS3EGATMA1 Bei (USD) [365089pcs Hisa]

  • 1 pcs$0.10131
  • 5,000 pcs$0.09726

Nambari ya Sehemu:
BSZ180P03NS3EGATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET P-CH 30V 39.6A TSDSON-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Viwango - RF, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Moja, Transistors - FET, MOSFETs - Arrays, Thyristors - SCR and Thyristors - TRIAC ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSZ180P03NS3EGATMA1 Sifa za Bidhaa

Nambari ya Sehemu : BSZ180P03NS3EGATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET P-CH 30V 39.6A TSDSON-8
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9A (Ta), 39.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 18 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 3.1V @ 48µA
Malango ya Lango (Qg) (Max) @ Vgs : 30nC @ 10V
Vgs (Max) : ±25V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2220pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.1W (Ta), 40W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TSDSON-8
Kifurushi / Kesi : 8-PowerTDFN