Vishay Siliconix - SQM30010EL_GE3

KEY Part #: K6418157

SQM30010EL_GE3 Bei (USD) [53470pcs Hisa]

  • 1 pcs$0.73126

Nambari ya Sehemu:
SQM30010EL_GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 30V D2PAK TO-263.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Moja, Transistors - IGBTs - Moduli, Viwango - Zener - Arrays, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja and Thyristors - SCR ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQM30010EL_GE3 Sifa za Bidhaa

Nambari ya Sehemu : SQM30010EL_GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 30V D2PAK TO-263
Mfululizo : Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.35 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 450nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 28000pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 375W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-263 (D²Pak)
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB