Infineon Technologies - IPA60R299CPXKSA1

KEY Part #: K6418063

IPA60R299CPXKSA1 Bei (USD) [50642pcs Hisa]

  • 1 pcs$0.77209
  • 500 pcs$0.70826

Nambari ya Sehemu:
IPA60R299CPXKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 600V 11A TO220-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moja and Viwango - Bridge Rectifiers ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA60R299CPXKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IPA60R299CPXKSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 600V 11A TO220-3
Mfululizo : CoolMOS™
Hali ya Sehemu : Not For New Designs
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 11A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 299 mOhm @ 6.6A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 440µA
Malango ya Lango (Qg) (Max) @ Vgs : 29nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1100pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 33W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO220-FP
Kifurushi / Kesi : TO-220-3 Full Pack