Vishay Siliconix - SQD50P08-25L_GE3

KEY Part #: K6411850

SQD50P08-25L_GE3 Bei (USD) [69974pcs Hisa]

  • 1 pcs$0.55879
  • 2,000 pcs$0.50291

Nambari ya Sehemu:
SQD50P08-25L_GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET P-CHAN 80V TO252.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - RF, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - Arrays, Viwango - Bridge Rectifiers, Viwango - Rectifiers - Moja and Transistors - IGBTs - Moja ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SQD50P08-25L_GE3 electronic components. SQD50P08-25L_GE3 can be shipped within 24 hours after order. If you have any demands for SQD50P08-25L_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQD50P08-25L_GE3 Sifa za Bidhaa

Nambari ya Sehemu : SQD50P08-25L_GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET P-CHAN 80V TO252
Mfululizo : Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 50A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 25 mOhm @ 10.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 137nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 5350pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 136W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-252AA
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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