Toshiba Semiconductor and Storage - TK9J90E,S1E

KEY Part #: K6417338

TK9J90E,S1E Bei (USD) [29408pcs Hisa]

  • 1 pcs$1.54245
  • 25 pcs$1.23801
  • 100 pcs$1.07009
  • 500 pcs$0.86652
  • 1,000 pcs$0.73080

Nambari ya Sehemu:
TK9J90E,S1E
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
MOSFET N-CH 900V TO-3PN.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moja, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCR and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage TK9J90E,S1E electronic components. TK9J90E,S1E can be shipped within 24 hours after order. If you have any demands for TK9J90E,S1E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK9J90E,S1E Sifa za Bidhaa

Nambari ya Sehemu : TK9J90E,S1E
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : MOSFET N-CH 900V TO-3PN
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 900V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.3 Ohm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 900µA
Malango ya Lango (Qg) (Max) @ Vgs : 46nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2000pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 250W (Tc)
Joto la Kufanya kazi : 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-3P(N)
Kifurushi / Kesi : TO-3P-3, SC-65-3