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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - FET, MOSFETs - Moja
  5. FQD10N20CTM

ON Semiconductor - FQD10N20CTM

KEY Part #: K6417299

FQD10N20CTM Bei (USD) [296253pcs Hisa]

  • 1 pcs$0.12485
  • 2,500 pcs$0.11544
Nambari ya Sehemu:
FQD10N20CTM
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 200V 7.8A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Ushirikiano uliopangwa, Viwango - RF, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Thyristors - SCRs - Moduli, Viwango - Rectifiers - Arrays and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
We specialize in ON Semiconductor FQD10N20CTM electronic components. FQD10N20CTM can be shipped within 24 hours after order. If you have any demands for FQD10N20CTM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQD10N20CTM Sifa za Bidhaa

Nambari ya Sehemu : FQD10N20CTM
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 200V 7.8A DPAK
Mfululizo : QFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 7.8A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 360 mOhm @ 3.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 510pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 50W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D-Pak
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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