HS8K11TB Bei (USD) [609458pcs Hisa]
- 1 pcs$0.06709
- 3,000 pcs$0.06676
- Nambari ya Sehemu:
- HS8K11TB
- Mzalishaji:
- Rohm Semiconductor
- Maelezo ya kina:
- MOSFET 2N-CH 30V 7A/11A HSML.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - Moja, Thyristors - TRIAC, Transistors - Kusudi Maalum, Transistors - JFETs, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - Bipolar (BJT) - RF ...
- Faida ya Ushindani:
- We specialize in Rohm Semiconductor HS8K11TB electronic components. HS8K11TB can be shipped within 24 hours after order. If you have any demands for HS8K11TB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HS8K11TB Sifa za Bidhaa
Nambari ya Sehemu :
HS8K11TB
Mzalishaji :
Rohm Semiconductor
Maelezo :
MOSFET 2N-CH 30V 7A/11A HSML
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
7A, 11A
Njia ya Kutumia (Max) @ Id, Vgs :
17.9 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
11.1nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
500pF @ 15V
Nguvu - Max :
2W
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-UDFN Exposed Pad
Kifurushi cha Kifaa cha Mtoaji :
HSML3030L10
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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