STMicroelectronics - STL3NM60N

KEY Part #: K6411849

STL3NM60N Bei (USD) [98401pcs Hisa]

  • 1 pcs$0.39935
  • 3,000 pcs$0.39736

Nambari ya Sehemu:
STL3NM60N
Mzalishaji:
STMicroelectronics
Maelezo ya kina:
MOSFET N-CH 600V 0.65A POWERFLAT.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - RF, Transistors - Kusudi Maalum, Thyristors - TRIAC, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - RF and Viwango - RF ...
Faida ya Ushindani:
We specialize in STMicroelectronics STL3NM60N electronic components. STL3NM60N can be shipped within 24 hours after order. If you have any demands for STL3NM60N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STL3NM60N Sifa za Bidhaa

Nambari ya Sehemu : STL3NM60N
Mzalishaji : STMicroelectronics
Maelezo : MOSFET N-CH 600V 0.65A POWERFLAT
Mfululizo : MDmesh™ II
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 650mA (Ta), 2.2A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.8 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 9.5nC @ 10V
Vgs (Max) : ±25V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 188pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2W (Ta), 22W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerFlat™ (3.3x3.3)
Kifurushi / Kesi : 8-PowerVDFN

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