Vishay Siliconix - SI2315BDS-T1-GE3

KEY Part #: K6416218

SI2315BDS-T1-GE3 Bei (USD) [324558pcs Hisa]

  • 1 pcs$0.11396
  • 3,000 pcs$0.10724

Nambari ya Sehemu:
SI2315BDS-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET P-CH 12V 3A SOT23-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - Arrays, Viwango - RF, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - DIAC, SIDAC and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI2315BDS-T1-GE3 electronic components. SI2315BDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2315BDS-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI2315BDS-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SI2315BDS-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET P-CH 12V 3A SOT23-3
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 12V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 50 mOhm @ 3.85A, 4.5V
Vgs (th) (Max) @ Id : 900mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 15nC @ 4.5V
Vgs (Max) : ±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 715pF @ 6V
Makala ya FET : -
Kuondoa Nguvu (Max) : 750mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-23-3 (TO-236)
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3