TPN22006NH,LQ Bei (USD) [293170pcs Hisa]
- 1 pcs$0.13947
- 3,000 pcs$0.13878
- Nambari ya Sehemu:
- TPN22006NH,LQ
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N CH 60V 9A 8-TSON.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Arrays, Viwango - Rectifiers - Arrays, Viwango - Zener - Arrays, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - TRIAC and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TPN22006NH,LQ electronic components. TPN22006NH,LQ can be shipped within 24 hours after order. If you have any demands for TPN22006NH,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN22006NH,LQ Sifa za Bidhaa
Nambari ya Sehemu :
TPN22006NH,LQ
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N CH 60V 9A 8-TSON
Mfululizo :
U-MOSVIII-H
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
9A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
6.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
22 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
710pF @ 30V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
700mW (Ta), 18W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-TSON Advance (3.3x3.3)
Kifurushi / Kesi :
8-PowerVDFN
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