Nambari ya Sehemu :
TK50P03M1(T6RSS-Q)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 30V 50A DP TO252-3
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
50A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
7.5 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 200µA
Malango ya Lango (Qg) (Max) @ Vgs :
25.3nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1700pF @ 10V
Kuondoa Nguvu (Max) :
47W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DP
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63