[474pcs Hisa]
- Nambari ya Sehemu:
- IXFH26N55Q
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 550V 26A TO-247.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - Ushirikiano uliopangwa, Moduli za Dereva za Nguvu, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Moja, Thyristors - SCR and Transistors - Kusudi Maalum ...
- Faida ya Ushindani:
- We specialize in IXYS IXFH26N55Q electronic components. IXFH26N55Q can be shipped within 24 hours after order. If you have any demands for IXFH26N55Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH26N55Q Sifa za Bidhaa
Nambari ya Sehemu :
IXFH26N55Q
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 550V 26A TO-247
Mfululizo :
HiPerFET™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
550V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
26A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
230 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 4mA
Malango ya Lango (Qg) (Max) @ Vgs :
92nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3000pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
375W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-247AD (IXFH)
Kifurushi / Kesi :
TO-247-3
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