SI1926DL-T1-GE3 Bei (USD) [575693pcs Hisa]
- 1 pcs$0.06425
- 3,000 pcs$0.06069
- Nambari ya Sehemu:
- SI1926DL-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2N-CH 60V 0.37A SOT363.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - RF, Thyristors - TRIAC, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika and Transistors - Kusudi Maalum ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI1926DL-T1-GE3 electronic components. SI1926DL-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1926DL-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1926DL-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI1926DL-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2N-CH 60V 0.37A SOT363
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
370mA
Njia ya Kutumia (Max) @ Id, Vgs :
1.4 Ohm @ 340mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
1.4nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
18.5pF @ 30V
Nguvu - Max :
510mW
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji :
SC-70-6 (SOT-363)
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