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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  4. Transistors - FET, MOSFETs - Moja
  5. NTHD4P02FT1G

ON Semiconductor - NTHD4P02FT1G

KEY Part #: K6392658

NTHD4P02FT1G Bei (USD) [508821pcs Hisa]

  • 1 pcs$0.07269
  • 6,000 pcs$0.04653
Nambari ya Sehemu:
NTHD4P02FT1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET P-CH 20V 2.2A CHIPFET.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Thyristors - TRIAC, Thyristors - SCR, Transistors - Ushirikiano uliopangwa, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - RF, Viwango - Zener - Moja and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
We specialize in ON Semiconductor NTHD4P02FT1G electronic components. NTHD4P02FT1G can be shipped within 24 hours after order. If you have any demands for NTHD4P02FT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTHD4P02FT1G Sifa za Bidhaa

Nambari ya Sehemu : NTHD4P02FT1G
Mzalishaji : ON Semiconductor
Maelezo : MOSFET P-CH 20V 2.2A CHIPFET
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2.2A (Tj)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 155 mOhm @ 2.2A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 6nC @ 4.5V
Vgs (Max) : ±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 300pF @ 10V
Makala ya FET : Schottky Diode (Isolated)
Kuondoa Nguvu (Max) : 1.1W (Tj)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : ChipFET™
Kifurushi / Kesi : 8-SMD, Flat Lead

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