IPB019N08N3GATMA1 Bei (USD) [28343pcs Hisa]
- 1 pcs$1.45407
- Nambari ya Sehemu:
- IPB019N08N3GATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 80V 180A TO263-7.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - Kusudi Maalum, Viwango - Zener - Arrays, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Transistors - JFETs, Moduli za Dereva za Nguvu and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPB019N08N3GATMA1 electronic components. IPB019N08N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPB019N08N3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB019N08N3GATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPB019N08N3GATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 80V 180A TO263-7
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
180A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.9 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 270µA
Malango ya Lango (Qg) (Max) @ Vgs :
206nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
14200pF @ 40V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
300W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO263-7
Kifurushi / Kesi :
TO-263-7, D²Pak (6 Leads + Tab)
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