ON Semiconductor - NVMFD5C650NLT1G

KEY Part #: K6521907

NVMFD5C650NLT1G Bei (USD) [82350pcs Hisa]

  • 1 pcs$0.47481

Nambari ya Sehemu:
NVMFD5C650NLT1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET 2N-CH 60V 111A S08FL.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - Kusudi Maalum, Viwango - Zener - Moja, Viwango - Rectifiers - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Moja and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
We specialize in ON Semiconductor NVMFD5C650NLT1G electronic components. NVMFD5C650NLT1G can be shipped within 24 hours after order. If you have any demands for NVMFD5C650NLT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFD5C650NLT1G Sifa za Bidhaa

Nambari ya Sehemu : NVMFD5C650NLT1G
Mzalishaji : ON Semiconductor
Maelezo : MOSFET 2N-CH 60V 111A S08FL
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 21A (Ta), 111A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs : 4.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 98µA
Malango ya Lango (Qg) (Max) @ Vgs : 16nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2546pF @ 25V
Nguvu - Max : 3.5W (Ta), 125W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-PowerTDFN
Kifurushi cha Kifaa cha Mtoaji : 8-DFN (5x6) Dual Flag (SO8FL-Dual)