TK58E06N1,S1X Bei (USD) [69791pcs Hisa]
- 1 pcs$0.61879
- 50 pcs$0.49453
- 100 pcs$0.43269
- 500 pcs$0.31741
- 1,000 pcs$0.25059
- Nambari ya Sehemu:
- TK58E06N1,S1X
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N CH 60V 58A TO-220.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Transistors - Kusudi Maalum, Viwango - RF, Thyristors - SCR, Transistors - IGBTs - Moduli, Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TK58E06N1,S1X electronic components. TK58E06N1,S1X can be shipped within 24 hours after order. If you have any demands for TK58E06N1,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK58E06N1,S1X Sifa za Bidhaa
Nambari ya Sehemu :
TK58E06N1,S1X
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N CH 60V 58A TO-220
Mfululizo :
U-MOSVIII-H
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
58A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
5.4 mOhm @ 29A, 10V
Vgs (th) (Max) @ Id :
4V @ 500µA
Malango ya Lango (Qg) (Max) @ Vgs :
46nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3400pF @ 30V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
110W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220
Kifurushi / Kesi :
TO-220-3
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