Toshiba Semiconductor and Storage - TK31J60W5,S1VQ

KEY Part #: K6416292

TK31J60W5,S1VQ Bei (USD) [12995pcs Hisa]

  • 1 pcs$3.50567
  • 25 pcs$3.48823

Nambari ya Sehemu:
TK31J60W5,S1VQ
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
MOSFET N-CH 600V 30.8A TO-3PN.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moduli, Thyristors - SCR, Transistors - FET, MOSFETs - Moja, Viwango - Zener - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Moja and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK31J60W5,S1VQ Sifa za Bidhaa

Nambari ya Sehemu : TK31J60W5,S1VQ
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : MOSFET N-CH 600V 30.8A TO-3PN
Mfululizo : DTMOSIV
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 30.8A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 88 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 1.5mA
Malango ya Lango (Qg) (Max) @ Vgs : 105nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3000pF @ 300V
Makala ya FET : Super Junction
Kuondoa Nguvu (Max) : 230W (Tc)
Joto la Kufanya kazi : 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-3P(N)
Kifurushi / Kesi : TO-3P-3, SC-65-3