RCD100N19TL Bei (USD) [202426pcs Hisa]
- 1 pcs$0.20200
- 2,500 pcs$0.20099
- Nambari ya Sehemu:
- RCD100N19TL
- Mzalishaji:
- Rohm Semiconductor
- Maelezo ya kina:
- MOSFET N-CH 190V 10A CPT3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Viwango - Bridge Rectifiers, Transistors - IGBTs - Arrays, Transistors - Kusudi Maalum, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in Rohm Semiconductor RCD100N19TL electronic components. RCD100N19TL can be shipped within 24 hours after order. If you have any demands for RCD100N19TL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RCD100N19TL Sifa za Bidhaa
Nambari ya Sehemu :
RCD100N19TL
Mzalishaji :
Rohm Semiconductor
Maelezo :
MOSFET N-CH 190V 10A CPT3
Mfululizo :
-
Hali ya Sehemu :
Not For New Designs
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
190V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
182 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
52nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2000pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
850mW (Ta), 20W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
CPT3
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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