Diodes Incorporated - DMN3300U-7

KEY Part #: K6417563

DMN3300U-7 Bei (USD) [618813pcs Hisa]

  • 1 pcs$0.07116
  • 3,000 pcs$0.07081

Nambari ya Sehemu:
DMN3300U-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N-CH 30V 2A SOT23-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Viwango - RF, Viwango - Rectifiers - Moja, Thyristors - TRIAC, Viwango - Bridge Rectifiers, Transistors - Kusudi Maalum and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN3300U-7 electronic components. DMN3300U-7 can be shipped within 24 hours after order. If you have any demands for DMN3300U-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3300U-7 Sifa za Bidhaa

Nambari ya Sehemu : DMN3300U-7
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N-CH 30V 2A SOT23-3
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 150 mOhm @ 4.5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : -
Vgs (Max) : ±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 193pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 700mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-23-3
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3

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