ON Semiconductor - FQI4N80TU

KEY Part #: K6419019

FQI4N80TU Bei (USD) [87801pcs Hisa]

  • 1 pcs$0.45781
  • 1,000 pcs$0.45554

Nambari ya Sehemu:
FQI4N80TU
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 800V 3.9A I2PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Thyristors - SCR, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - JFETs, Transistors - IGBTs - Moduli, Viwango - Zener - Moja and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
We specialize in ON Semiconductor FQI4N80TU electronic components. FQI4N80TU can be shipped within 24 hours after order. If you have any demands for FQI4N80TU, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQI4N80TU Sifa za Bidhaa

Nambari ya Sehemu : FQI4N80TU
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 800V 3.9A I2PAK
Mfululizo : QFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.9A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3.6 Ohm @ 1.95A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 880pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.13W (Ta), 130W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : I2PAK (TO-262)
Kifurushi / Kesi : TO-262-3 Long Leads, I²Pak, TO-262AA