Comchip Technology - CDBDSC10650-G

KEY Part #: K6441607

CDBDSC10650-G Bei (USD) [19897pcs Hisa]

  • 1 pcs$2.07129

Nambari ya Sehemu:
CDBDSC10650-G
Mzalishaji:
Comchip Technology
Maelezo ya kina:
DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 10A 650V
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Viwango - RF, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - Moja, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - RF and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
We specialize in Comchip Technology CDBDSC10650-G electronic components. CDBDSC10650-G can be shipped within 24 hours after order. If you have any demands for CDBDSC10650-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBDSC10650-G Sifa za Bidhaa

Nambari ya Sehemu : CDBDSC10650-G
Mzalishaji : Comchip Technology
Maelezo : DIODE SILICON CARBIDE POWER SCHO
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Sasa - Wastani Aliyerekebishwa (Io) : 33A (DC)
Voltage - Mbele (Vf) (Max) @ Kama : 1.7V @ 10A
Kasi : No Recovery Time > 500mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 0ns
Sasa - Rejea kuvuja @ Vr : 100µA @ 650V
Uwezo @ Vr, F : 690pF @ 0V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji : D-PAK (TO-252)
Joto la Kufanya kazi - Junction : -55°C ~ 175°C

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