Microsemi Corporation - JAN1N6622US

KEY Part #: K6442405

[7413pcs Hisa]


    Nambari ya Sehemu:
    JAN1N6622US
    Mzalishaji:
    Microsemi Corporation
    Maelezo ya kina:
    DIODE GEN PURP 660V 2A D5A. Rectifiers Rectifier
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Moduli, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Kufika and Transistors - IGBTs - Arrays ...
    Faida ya Ushindani:
    We specialize in Microsemi Corporation JAN1N6622US electronic components. JAN1N6622US can be shipped within 24 hours after order. If you have any demands for JAN1N6622US, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    JAN1N6622US Sifa za Bidhaa

    Nambari ya Sehemu : JAN1N6622US
    Mzalishaji : Microsemi Corporation
    Maelezo : DIODE GEN PURP 660V 2A D5A
    Mfululizo : Military, MIL-PRF-19500/585
    Hali ya Sehemu : Active
    Aina ya Diode : Standard
    Voltage - DC Reverse (Vr) (Max) : 660V
    Sasa - Wastani Aliyerekebishwa (Io) : 1.2A
    Voltage - Mbele (Vf) (Max) @ Kama : 1.4V @ 1.2A
    Kasi : Fast Recovery =< 500ns, > 200mA (Io)
    Rudisha Wakati wa Kuokoa (trr) : 30ns
    Sasa - Rejea kuvuja @ Vr : 500nA @ 660V
    Uwezo @ Vr, F : 10pF @ 10V, 1MHz
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : SQ-MELF, A
    Kifurushi cha Kifaa cha Mtoaji : D-5A
    Joto la Kufanya kazi - Junction : -65°C ~ 150°C

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