Nambari ya Sehemu :
RD0106T-H
Mzalishaji :
ON Semiconductor
Maelezo :
DIODE GEN PURP 600V 1A TP
Hali ya Sehemu :
Obsolete
Voltage - DC Reverse (Vr) (Max) :
600V
Sasa - Wastani Aliyerekebishwa (Io) :
1A
Voltage - Mbele (Vf) (Max) @ Kama :
1.3V @ 1A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
50ns
Sasa - Rejea kuvuja @ Vr :
10µA @ 600V
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
TO-251-3 Short Leads, IPak, TO-251AA
Kifurushi cha Kifaa cha Mtoaji :
TP
Joto la Kufanya kazi - Junction :
150°C (Max)