Infineon Technologies - BSP613PH6327XTSA1

KEY Part #: K6420123

BSP613PH6327XTSA1 Bei (USD) [162124pcs Hisa]

  • 1 pcs$0.22814
  • 1,000 pcs$0.19643

Nambari ya Sehemu:
BSP613PH6327XTSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET P-CH 60V 2.9A SOT-223.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCR, Viwango - Zener - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - RF and Thyristors - TRIAC ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSP613PH6327XTSA1 Sifa za Bidhaa

Nambari ya Sehemu : BSP613PH6327XTSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET P-CH 60V 2.9A SOT-223
Mfululizo : SIPMOS®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2.9A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 130 mOhm @ 2.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 33nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 875pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.8W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-SOT223-4
Kifurushi / Kesi : TO-261-4, TO-261AA