SISH106DN-T1-GE3 Bei (USD) [114968pcs Hisa]
- 1 pcs$0.32172
- Nambari ya Sehemu:
- SISH106DN-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CHAN PPAK 1212-8SH.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Bridge Rectifiers, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Moja and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SISH106DN-T1-GE3 electronic components. SISH106DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH106DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISH106DN-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SISH106DN-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CHAN PPAK 1212-8SH
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
12.5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
6.2 mOhm @ 19.5A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
27nC @ 4.5V
Vgs (Max) :
±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1.5W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® 1212-8SH
Kifurushi / Kesi :
PowerPAK® 1212-8SH
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