[310pcs Hisa]
- Nambari ya Sehemu:
- BSP297L6327HTSA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 200V 660MA SOT-223.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - Arrays, Viwango - Bridge Rectifiers, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - RF and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSP297L6327HTSA1 electronic components. BSP297L6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BSP297L6327HTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP297L6327HTSA1 Sifa za Bidhaa
Nambari ya Sehemu :
BSP297L6327HTSA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 200V 660MA SOT-223
Mfululizo :
SIPMOS®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
660mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.8 Ohm @ 660mA, 10V
Vgs (th) (Max) @ Id :
1.8V @ 400µA
Malango ya Lango (Qg) (Max) @ Vgs :
16.1nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
357pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1.8W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-SOT223-4
Kifurushi / Kesi :
TO-261-4, TO-261AA
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